BSC057N08NS3G 数据手册
其他文档
S3A-S3N 5 pages
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies BSC057N08NS3G
- Power Dissipation (Pd): 2.5W
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 16A
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@73uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5.7mΩ@10V,50A
- Package: TDSON-8(6x5)
- Manufacturer: Infineon Technologies
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5µs
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -55°C ~ 150°C
- Base Part Number: S3G
- detail: Diode Standard 400V 3A Surface Mount SMC (DO-214AB)