دیتاشیت BSC057N08NS3G
مشخصات دیتاشیت
| نام دیتاشیت |
BSC057N08NS3G
|
| حجم فایل |
58.094
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات فنی
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Infineon Technologies BSC057N08NS3G
-
Power Dissipation (Pd):
2.5W
-
Drain Source Voltage (Vdss):
80V
-
Continuous Drain Current (Id):
16A
-
Gate Threshold Voltage (Vgs(th)@Id):
3.5V@73uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
5.7mΩ@10V,50A
-
Package:
TDSON-8(6x5)
-
Manufacturer:
Infineon Technologies
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
Diode Type:
Standard
-
Voltage - DC Reverse (Vr) (Max):
400V
-
Current - Average Rectified (Io):
3A
-
Voltage - Forward (Vf) (Max) @ If:
1.2V @ 3A
-
Speed:
Standard Recovery >500ns, > 200mA (Io)
-
Reverse Recovery Time (trr):
2.5µs
-
Current - Reverse Leakage @ Vr:
5µA @ 400V
-
Capacitance @ Vr, F:
60pF @ 4V, 1MHz
-
Mounting Type:
Surface Mount
-
Package / Case:
DO-214AB, SMC
-
Supplier Device Package:
SMC (DO-214AB)
-
Operating Temperature - Junction:
-55°C ~ 150°C
-
Base Part Number:
S3G
-
detail:
Diode Standard 400V 3A Surface Mount SMC (DO-214AB)
